FIB-SEM GAIA 3
General Information
Unit
CNR ICCOMTechnique
Key Instrumentation
Electron Microscope / Scanning Probe MicroscopeFIB-SEM: Tescan GAIA
The configuration Dual Beam in systems is such that the electron and ion beam (Gallium) focal points coincide, which results in the optimization of many applications. Such a feature enables simultaneous SEM imaging during FIB milling tasks – a significant leap in terms of performance and throughput in all those FIB operations which demand ultimate levels of precision.
Tescan Gaia 3 is use a versatile instrument for analysis (EDS) and characterization (SEM-STEM) using electron microscopy techniques on samples of various kinds: materials, metallurgy, coatings, renewable energy, life sciences, cultural heritage, agri-food. Metrological investigations. Micro & Nano processing of surfaces by ion beam (FIB). Electron-Beam Lithography. Analysis and characterization consultancy, through electron microscopy, for project development and technology transfer.
GAIA3 is the ideal platform for performing the most challenging nanoengineering applications that require ultimate precision and demanding capabilities for microanalysis. Preparation of high-quality ultra-thin TEM lamellae, delayering processes in technology nodes, precise nanopatterning and high-resolution 3D reconstructions are just some of the applications in which GAIA3 excel. Analytical Scanning Electron Microscope (S/TEM), that combines outstanding high-resolution STEM and TEM imaging with industry-leading energy dispersive X-ray spectroscopy (EDS) signal detection.
-GAIA3 can be use in different mode: UH-RESOLUTION mode; ANALYSIS mode; DEPTH mode
-Performs analyses in different fields: Life science; Material science; Semiconductor and others.
GAIA 3 Tescan is a multifunctional tool.
Technical description
-The TESCAN GAIA3 integrates a field emission SEM with a FIB
The SEM unit is equipped with detectors for secondary and backscattered
It allows preparation of high-quality ultra-thin TEM lamellae. It has a unique 3-lens electron optical design capable of dedicated modes for extreme high-resolution imaging, enhanced depth of focus, undistorted ultra-low magnification imaging, and live 3D stereo imaging. The smart chamber design of the instrument allows for the simultaneous milling and collection of EBSD patterns without the need to move the sample. This flexibility will provide best-in-class accuracy for 3D-EDS.
-GAIA3 is the ideal platform
UH-RESOLUTION mode: This mode is achieved by the unique combination of immersion optics and crossover-free mode for ultra-high resolution imaging at low energies. Avoiding any crossover in the column reduces the Boersch effect and further optimizes the electron beam to yield superior resolution of 1 nm at 1 keV.
ANALYSIS mode: This mode is implemented by means of the Analytical lens. It is well suited for analysis such as EDS and EBSD, as well as simultaneous SEM imaging during FIB operations such as cross-sectioning and FIB-SEM tomography.
DEPTH mode: The UH-resolution lens can be used in combination with the IML lens which allows for increasing the probe current while maintaining excellent resolution and enabling large depth of focus.Research areas and applications
-The TESCAN GAIA3 integrates a field emission SEM with a FIB
The SEM unit is equipped with detectors for secondary and backscattered
It allows preparation of high-quality ultra-thin TEM lamellae. It has a unique 3-lens electron optical design capable of dedicated modes for extreme high-resolution imaging, enhanced depth of focus, undistorted ultra-low magnification imaging, and live 3D stereo imaging. The smart chamber design of the instrument allows for the simultaneous milling and collection of EBSD patterns without the need to move the sample. This flexibility will provide best-in-class accuracy for 3D-EDS.
-GAIA3 is the ideal platform
UH-RESOLUTION mode: This mode is achieved by the unique combination of immersion optics and crossover-free mode for ultra-high resolution imaging at low energies. Avoiding any crossover in the column reduces the Boersch effect and further optimizes the electron beam to yield superior resolution of 1 nm at 1 keV.
ANALYSIS mode: This mode is implemented by means of the Analytical lens. It is well suited for analysis such as EDS and EBSD, as well as simultaneous SEM imaging during FIB operations such as cross-sectioning and FIB-SEM tomography.
DEPTH mode: The UH-resolution lens can be used in combination with the IML lens which allows for increasing the probe current while maintaining excellent resolution and enabling large depth of focus.Science highlights
Salvatore Impemba, Giacomo Provinciali, Jonathan Filippi, Cristina Salvatici, Enrico Berretti, Stefano Caporali, Martina Banchelli, Maria Caporali. International Journal of Hydrogen Energy (2024). https://doi.org/10.1016/j.ijhydene.2024.03.162
Walter Giurlani, Enrico Berretti, Alessandro Lavacchi, Massimo Innocenti. Analytica Chimica Acta. (2020). https://doi.org/10.1016/j.aca.2020.07.047
Samuele Fanetti; Sebastiano Romi; Enrico Berretti; Michael Hanfland; Emin Mijit; Frederico Alabarse; Philip Dalladay-Simpson; Federico Gorelli; Roberto Bini; Mario Santoro -The Journal of Chemical Physics (2023). https://doi.org/10.1063/5.0167748
Experimental team
- Alessandro Lavacchi
- CNR-ICCOM
- Researcher