FIB-SEM GAIA 3
General Information
The configuration Dual Beam in systems is such that the electron and ion beam (Gallium) focal points coincide, which results in the optimization of many applications. Such a feature enables simultaneous SEM imaging during FIB milling tasks – a significant leap in terms of performance and throughput in all those FIB operations that demand ultimate levels of precision.
Tecnical description
It allows preparation of high-quality ultra-thin TEM lamellae, delayering processes in technology nodes, precise nanopatterning and high-resolution 3D reconstructions. It has a unique 3-lens electron optical design capable of dedicated modes for extreme high-resolution imaging, enhanced depth of focus, undistorted ultra-low magnification imaging, and live 3D stereo imaging. The smart chamber design of the instrument allows for the simultaneous milling and collection of EBSD patterns without the need to move the sample. This flexibility is unique to TESCAN and will provide best-in-class accuracy and throughput for EBSD and 3D-EDS.
Research areas and applications
Tescan Gaia 3 is use a versatile instrument for analysis (EDS) and characterization (SEM-STEM) using electron microscopy techniques on samples of various kinds: materials, metallurgy, coatings, renewable energy, life sciences, cultural heritage, agri-food. Metrological investigations. Micro & Nano processing of surfaces by ion beam (FIB).
Science highlights
Experimental team
- Alessandro Lavacchi
- CNR-ICCOM
- Researcher